Production Processes

Silicon wafer manufacturing processes are roughly divided into crystal growth processes and wafer processing processes.

process

01

Poly-Crystaline Silicon (Nuggets)

process

02

Pulling Single Crystal Silicon Ingots (CZ Method)

Polycrystalline silicon is put into a quartz crucible and heated and melted by a graphite heater under reduced pressure in an inert atmosphere.
After that, seed crystals are dipped into the surface of the melt, and silicon single-crystals are grown while controlling the pulling speed of the crystals and the temperature inside the furnace.
CZ method : Czochralski method

process

03

Single Crystal Silicon Ingots

The single-crystal silicon ingot has a cylindrical shape as shown in the figure.
Crystals for φ300 mm wafers are very large, measuring 2 m in length and weighing over 300 kg.

process

04

Peripheral Grinding

The outer circumference of a single crystal silicon ingot is ground to a specified diameter.
A part of the periphery is processed to form grooves (notches) or planes (orientation flats) to indicate the crystal orientation.

The formed groove (notch).
After that, it is cut to the specified length before slicing.

process

05

Slicing

The circumference of the monocrystalline ingot is ground down to a uniform diameter. Based on the resistivity desired by the customer, the ingot is then cut into slices of around 1mm thickness, using an inner-diameter saw or wire saw, to form the wafers.

process

06

Beveling (Peripheral Rounding)

To prevent chipping and cracking during the wafer fabrication process, the edge of the wafer is ground and chamfered in an arc shape with a diamond wheel.

process

07

Lapping (Double Side Lapping)

The sliced wafers are polished by alumina abrasive in a lapping machine to the desired thickness, while improving the surface parallelism.

process

08

Etching (Chemical Polishing)

Mechanical damage to the wafer surface resulting from the earlier steps is removed by chemical etching.

process

09

Polishing (mirror polishing)

The wafer surfaces are made perfectly flat and given a mirror finish by means of mechano-chemical polishing using colloidal silica.

process

10

Annealing Treatment

High-temperature heat treatment is performed in a vertical furnace to eliminate void defects generated during crystal growth.
At the same time, oxygen precipitates are formed inside the wafer.

process

11

Cleaning

Wafers are physically and chemically cleaned using ultra-pure water and chemicals.

process

12

Inspections

Numerous inspections are performed, to check flatness, particles, impurity concentration, specific resistance, etc.

process

13

Packaging

Wafers are packaged in a clean shipping case, and sealed in a special moisture-proof bag.